The development of 3D integrated circuits is crucial for enhancing the efficiency of electronics to meet the ever-growing demands of consumers. While research in this area is ongoing, actualizing theoretical findings into tangible devices is a challenging task. However, a team of researchers from The University of Tokyo’s Institute of Industrial Science in Japan recently developed a design that can transform these theories into reality.
A Breakthrough in Deposition Process for Nanosheet Oxide Semiconductor
The researchers recently published a study in the VLSI Symposium 2023, where they reported a deposition process for nanosheet oxide semiconductor. The results of this process showed that the oxide semiconductor has high carrier mobility and is reliable in transistors. The 3D integrated circuits consist of multiple layers, each playing a role in the overall function. Oxide semiconductors that can be processed at low temperatures, have high carrier mobility and low charge leakage are becoming popular materials for various circuit components. Oxides have an advantage over metals, especially in processes where electrodes may be exposed to oxygen during the integration process and become oxidized.
Challenges in Depositing Thin Layers of Oxide Semiconductor Materials
Although oxides have several advantages, developing the necessary processes to deposit thin layers of oxide semiconductor materials reliably in the manufacture of devices has been a challenge. No process has been established to date. The researchers reported an atomic layer deposition (ALD) technique that produces layers appropriate for large-scale integration. They carried out a systematic study of field effect transistors (FETs) using their process to establish their limitations and optimize their properties. FETs control the current flow in a semiconductor. The team tuned the ratio of the components and adjusted the preparation conditions. Their findings led to the development of a multi-gate nanosheet FET for normally-off operation and high reliability.
Improved Performance of FETs Made from Oxide Semiconductor by ALD
The findings revealed that an FET made from the chosen oxide semiconductor by ALD had the best performance. The multi-gate nanosheet FET combines high carrier mobility and reliability characteristics with normally-off operation, believed to be the first of its kind. Lead author Kaito Hikake said, “We believe that our study provides a robust technique that can be used to produce devices that meet the market’s need for manufacturable 3D integrated circuits with high function.”
The study’s findings may provide a solution to one of the significant obstacles in manufacturing electronic devices with semiconductors. This achievement could lead to the production of more electronics designs with high functionality. Masaharu Kobayashi, senior author, said, “In rapidly moving areas such as electronics, it is important to translate proof of concept findings into industrially relevant processes.” The team’s research bridged the gap between theoretical findings and practical applications, and their process could be used to produce devices that meet the market’s demand for 3D integrated circuits with high function.
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